1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance
- Resource Type
- Conference
- Authors
- Lin Zhu; Canhua Li; Chow, T.P.; Bhat, I.B.; Jones, K.A.; Scozzie, C.; Agarwal, A.
- Source
- Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Power semiconductor devices & ICs Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on. :283-286 2005
- Subject
- Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Rectifiers
Leakage current
Capacitance
Doping
Voltage
Silicon carbide
Schottky barriers
Surface resistance
Testing
Temperature
- Language
- ISSN
- 1063-6854
1946-0201
We propose and experimentally demonstrate a novel 1.5kV JBS rectifier structure called LC-JBS rectifier that offers a lower reverse leakage current and faster switching speed. Test devices were fabricated using an epi regrowth technology over implanted p+ buried layer. We have obtained performance trade-offs between forward drop (