Characterization of Field Cycling Fatigue in HfZrOx Ferroelectric Capacitors
- Resource Type
- Conference
- Authors
- Cai, Puyang; Liu, Zhiwei; Zhu, Tianxiang; Ji, Zhigang; Wang, Runsheng; Huang, Ru
- Source
- 2023 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2023 China. :1-3 Jun, 2023
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Electrodes
Breakdown voltage
Ferroelectric films
Electric breakdown
Capacitors
Fatigue
Iron
- Language
In this paper, the fatigue behavior of $\mathrm{H}\mathrm{f}\mathrm{Z}\mathrm{r}\mathrm{O}_{\mathrm{x}}$ (HZO) ferroelectric (FE) capacitor is thoroughly characterized. By proposing an empirical model applicable to the entire process of fatigue, we found that the fatigue effect is dominated by the process of charge migration to non-switching regions and charge exchange with electrodes to form the localized built-in field and cause domain-pinning.