Effect of uniform stress on Si p-n junctions
- Resource Type
- Periodical
- Authors
- Wooten, F.T.; Brooks, A.D.; Wortman, J.J.
- Source
- Proceedings of the IEEE Proc. IEEE Proceedings of the IEEE. 56(7):1221-1222 Jul, 1968
- Subject
- General Topics for Engineers
Engineering Profession
Aerospace
Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Geoscience
Nuclear Engineering
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Power, Energy and Industry Applications
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Stress
P-n junctions
Diodes
Steel
Silicon
Anisotropic magnetoresistance
Bonding
Strain measurement
Solids
Electric breakdown
- Language
- ISSN
- 0018-9219
1558-2256
A new method is described for produchrg large stress levels in semiconductor devices. The relative change in breakdown voltage induced by uniaxial stress σ was found to be (ΔV/V B )/σ≃-0.48 × 10 -12 , where stress is given in dynes/cm 2 . Experimental results are compared with the energy band model for the piezojunction effect.