Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- Resource Type
- Conference
- Authors
- Chien, W. C.; Gignac, L. M.; Chou, Y. C.; Yang, C. H.; Gong, N.; Ho, H. Y.; Yeh, C. W.; Cheng, H. Y.; Kim, W.; Kuo, I. T.; Lai, E. K.; Cheng, C. W.; Buzi, L.; Ray, A.; Hsu, C. S.; Bruce, R. L.; BrightSky, M.; Lung, H. L.
- Source
- 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P7-1-P7-4 Mar, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Phase change materials
Semiconductor device reliability
Stress
Physics
Testing
Qualifications
Constant current stress
Endurance
OTS
PCM
- Language
- ISSN
- 1938-1891
A constant current stress scheme is implemented for endurance study on OTS-PCM devices for the first time. It provides a feasible method to estimate the read/write endurance for cross-point PCM products, which can save testing time for chips qualification. A 256kb chip with 1E7 cycles is demonstrated that corresponds with the endurance evaluation on the doped AsGeSe OTS with doped Ge2Sb2Te5 system.