Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement
- Resource Type
- Conference
- Authors
- Laguna, C.; Bernard, M.; Garrione, J.; Castellani, N.; Meli, V.; Martin, S.; Aussenac, F.; Rouchon, D.; Rochat, N.; Nolot, E.; Bourgeois, G.; Cyrille, M. C.; Militaru, L.; Souifi, A.; Andrieu, F.; Navarro, G.
- Source
- ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :225-228 Sep, 2022
- Subject
- Components, Circuits, Devices and Systems
Phase change materials
Spectroscopy
Random access memory
Metals
Europe
Switches
Nonhomogeneous media
- Language
In this paper, we present an innovative Multilayer SeAsGeSi-based Ovonic Threshold Switching (OTS) Selector targeting high reliability for Crossbar arrays. We compare our Multilayer (ML) OTS with SeAsGeSi-based bulk alloy (SAGS). We demonstrate the high thermal stability of the ML stack against the Back-End-of-Line (BEOL) thermal budget as well as the reduction of the device-to-device variability and reliable switching operations up to 300°C. We study by Raman and FTIR spectroscopy the integrity of the ML OTS material after an annealing of 3 hours at 400° C. SeAsGeSi Multilayer OTS delays crystallization mechanism along cycling. We finally report the successful co-integration of our ML with Phase-Change Memory technology.