Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements
- Resource Type
- Periodical
- Authors
- Cutivet, A.; Pavlidis, G.; Hassan, B.; Bouchilaoun, M.; Rodriguez, C.; Soltani, A.; Graham, S.; Boone, F.; Maher, H.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(5):2139-2145 May, 2019
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Logic gates
HEMTs
Gallium nitride
Temperature measurement
Transient analysis
Electrical resistance measurement
Thermal resistance
Gallium nitride (GaN)
gate resistance thermometry (GRT)
high-electron-mobility transistors (HEMTs)
modeling
thermoreflectance
transient temperature measurement
- Language
- ISSN
- 0018-9383
1557-9646
This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs’ temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors’ knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.