TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices
- Resource Type
- Conference
- Authors
- Neuendank, Jereme; Al Mamun, Fahad; Barnaby, Hugh; Bonaldo, Stefano; Spear, Matthew; Wallace, Trace; Loveless, Daniel; Pew, Jacob; Nour, Mohamed; Manos, Pete; Giorno, Zach; Suriono, Usman; Chambers, Mike; Kosier, Steve
- Source
- 2023 IEEE International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2023 IEEE International. :1-5 Oct, 2023
- Subject
- Components, Circuits, Devices and Systems
Resistance
Performance evaluation
Radiation effects
MOSFET
Voltage measurement
Logic gates
Low-frequency noise
Total Ionizing Dose
TID
Random Telegraph Noise
RTN
Random Telegraph Signal
RTS
- Language
- ISSN
- 2374-8036
90-nm MOSFETs from SkyWater are tested under X-ray. Low frequency noise measurements evidence random telegraph noise at various gate voltages in both pre-and post-rad conditions, revealing pre-existing and TID-induced prominent defects.