Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process
- Resource Type
- Conference
- Authors
- Ehwald, K.E.; Knolll, D.; Heinemann, B.; Chang, K.; Kitchgessner, J.; Mauntel, R.; Lim, I.S.; Steele, J.; Schley, P.; Tillack, B.; Wolff, A.; Blum, K.; Winkler, W.; Pierschel, M.; Jagdhold, U.; Barth, R.; Grabolla, T.; Erzgraber, H.J.; Hunger, B.; Osten, H.J.
- Source
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :561-564 1999
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Heterojunction bipolar transistors
CMOS process
BiCMOS integrated circuits
Silicon germanium
Germanium silicon alloys
CMOS technology
Radio frequency
Epitaxial growth
Stability
MOS devices
- Language
We will describe the first modular integration of a SiGe:C heterojunction bipolar transistor (SiGe:C HBTs) into a conventional 0.25 /spl mu/m, epi-free CMOS platform. The high temperature stability of base doping profiles in SiGe:C HBTs and an optimized collector linkage have allowed the modular integration of an npn device with f/sub T//f/sub max/ of 55/90 GHz into two variants of a conventional epi-free 0.25 /spl mu/m CMOS platform. In both cases, the original CMOS steps and the electrical parameters of the CMOS devices remain essentially unchanged. Yield and electrical characteristics of the integrated SiGe:C HBT are shown to be the same as those from a bipolar-only process.