A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI Technology
- Resource Type
- Conference
- Authors
- Bossuet, Alice; Martineau, Baudouin; Dehos, Cedric; Blampey, Benjamin; Divay, Alexis; Morandini, Yvan
- Source
- 2021 16th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2021 16th European. :80-83 Apr, 2022
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Performance evaluation
5G mobile communication
OFDM
Stacking
Power amplifiers
Modulation
Microwave theory and techniques
power amplifier
5G OFDM
45RFSOI
stacking
realiability
- Language
This paper describes a highly rugged power-amplifier for the fifth generation (5G) FR2 new radio (NR) application implemented in a 45nm SOI process (45RFSOI). By using device stacking technique together with an optimized supply voltage reduction, the power amplifier achieves 20 dBm P sat and 23 % PAE max . A P avg of 10 dBm and a PAE avg of 8% is achieved in 64-QAM 200MHz bandwidth OFDM at EVM avg of 6.2% (-24.1dB) without the use of digital predistortion. The 4:1 VSWR measurement shows an excellent PA reliability even under the worst mismatch condition. These results enable an efficient, high power and highly reliable power amplifier for 5G applications.