A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm
- Resource Type
- Conference
- Authors
- Hamani, Abdelaziz; Siligaris, Alexandre; Blampey, Benjamin; Dehos, Cedric; Gonzalez Jimenez, Jose Luis
- Source
- 2020 IEEE/MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2020 IEEE/MTT-S International. :197-200 Aug, 2020
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Wireless communication
Noise figure
Low-noise amplifiers
Power supplies
Power amplifiers
Voltage
Receivers
D-band
low noise amplifier
mm-wave
transformer
CMOS 45-SOI nm
noise figure
- Language
- ISSN
- 2576-7216
In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB bandwidth of 31.5 GHz (125.5-157 GHz). It is composed of four stages of capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high gain and large bandwidth. It consumes 75 mW from a 1-V voltage supply, and occupies a compact active area of 0.07 mm 2 .