Numerical study of Silicon Heterojunction Solar Cells with nc-SiC/SiO2 Based Transparent Passivating Contact
- Resource Type
- Conference
- Authors
- Gebrewold, Habtamu T.; Bittkau, Karsten; Qiu, Kaifu; Ding, Kaining
- Source
- 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2021 IEEE 48th. :1115-1117 Jun, 2021
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Silicon carbide
Fill factor (solar cell)
Photovoltaic cells
Conferences
Doping
Heterojunctions
Amorphous silicon
Silicon heterojunction solar cell
transparent passivating contact
Numerical simulation
Tunneling
- Language
Silicon heterojunction with nc-SiC(n)/SiO 2 based front transparent passivating contact (TPC) is numerically modeled. The model is then used to study the effect of active dopant concentration at the front and rear contact of the solar cell. A potential of power conversion efficiency above 25 % can be achieved with a suitable acceptor dopant concentration of p-type amorphous silicon at the rear side. Improving fill factor via SiC dopant concentration can enhance the cell power conversion efficiency within a narrow range of active dopant concentration. However, very high doping of SiC can affect the cell performance negatively.