Voltage class Comparison of 3.3 kV SiC and 6.5 kV SiC Devices in the Application of HVDC Converters
- Resource Type
- Conference
- Authors
- Bergmann, Lukas; Wahle, Marcus; Bakran, Mark-M.
- Source
- 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :1-11 Sep, 2023
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
MOSFET
Multilevel converters
Silicon carbide
HVDC transmission
Europe
Voltage
Benchmark testing
HVDC
Modular Multilevel Converters (MMC)
Silicon Carbide (SiC)
- Language
This work contains a comparison of voltage classes for High Voltage Silicon Carbide devices in the application of Multilevel converters. First a theoretical analysis on device technology parameters is executed to predicate the optimum voltage class of Silicon Carbide devices for highest output power. After this a comparison for static and dynamic device characteristics is performed in a scaled hardware test setup. This data is used for a final converter system benchmark in a loss simulation tool. Furthermore the potential impact of Silicon Carbide super junction devices on the application is discussed based on a previous paper.