Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- Resource Type
- Conference
- Authors
- Mochizuki, S.; Bhuiyan, M.; Zhou, H.; Zhang, J.; Stuckert, E.; Li, J.; Zhao, K.; Wang, M.; Basker, V.; Loubet, N.; Guo, D.; Haran, B.; Bu, H.
- Source
- 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :2.3.1-2.3.4 Dec, 2020
- Subject
- Components, Circuits, Devices and Systems
Lattices
Logic gates
Germanium
Silicon
Epitaxial growth
Strain
Silicon germanium
- Language
- ISSN
- 2156-017X
Stacked Gate-All-Around (GAA) nanosheet pFETs with compressively strained Si 1-x Ge x channel have been fabricated to explore their electrical benefits. The Si 1-x Ge x NS channel structure with high crystalline quality and 1GPa compressive stress has been realized for the first time. Systematic study has been performed to understand the effect of epitaxial Si 1-x Ge x thickness, Ge fraction, and Si cap thickness on the Si 1-x Ge x NS channel device characteristics. It is found that the compressively strained Si 1-x Ge x NS channel provides a 100% uplift in peak hole mobility with a corresponding channel resistance reduction of 40% while maintaining an excellent subthreshold slope of below 70 mV/dec.