Study to find the applicability of Germanium FinFET with Negative Capacitance for High Temperatures Applications
- Resource Type
- Conference
- Authors
- Bansal, Monika; Kaur, Harsupreet
- Source
- 2019 5th International Conference on Signal Processing, Computing and Control (ISPCC) Signal Processing, Computing and Control (ISPCC), 2019 5th International Conference on. :41-46 Oct, 2019
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Robotics and Control Systems
Signal Processing and Analysis
Curie temperature
ferroelectric
Germanium FinFET
high temperature
negative capacitance
power dissipation
- Language
- ISSN
- 2643-8615
In the present work, we have presented the temperature investigation of Germanium FinFET (NCGeFinFET) with the effect of Negative Capacitance for a wide range of temperature i.e. 300 K to 380 K. The temperature dependent behavior of ferroelectric materials has been incorporated by solving 3D Poisson's equation with Landau-Khalatnikov equation which is temperature dependent. To analyze the performance of NCGeFinFET at high temperatures, various electrical characteristics have been obtained. The study has shown that NCGeFinFETprovides an excellent device performance for the complete temperature range (300–380 K) as compared to GeFinFET for which severe degradation in characteristics has been observed at 380 K. The impact of drain capacitance has also been modeled and it has been shown that at higher drain bias, the potential barrier increases for NCGeFinFET resulting in Drain Induced Barrier Rising (DIBR).