Due to its electrical conductivity and fluidity, liquid metal interconnection has the potential to become a new industrial power semiconductors packaging application method to solve the failure of wire bonding liftoff and improve the reliability of power semiconductor applications. As a crucial characteristic in use, the thermal characteristics of liquid metal interconnects for power semiconductors are obtained experimentally in this paper. By powering a diode die in a bridge busbar liquid metal interconnect structure, the thermal resistance from the die to the ambient is extracted. The result shows that the liquid metal interconnects method has the potential to improve the thermal behavior of power semiconductors compared with wire-bonding interconnection. The finite element simulation explains the possible reasons causing abnormal temperature responses among some samples. Besides, during the test, a slow decline in the forward voltage of the module is observed.