Interfacial chemistry and the performance of bromine-etched CdZnTe radiation detector devices
- Resource Type
- Conference
- Authors
- Rouse, A.A.; Szeles, C.; Ndap, J.-O.; Soldner, S.A.; Parnharn, K.B.; Gaspar, D.J.; Engelhard, A.H.; Lea, A.S.; Shutthanandan, S.V.; Thevuthasan, T.S.; Baer, D.R.
- Source
- 2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310) Nuclear science symposium Nuclear Science Symposium Conference Record, 2001 IEEE. 4:2459-2463 vol.4 2001
- Subject
- Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Chemistry
Radiation detectors
Etching
Electrodes
Crystals
Semiconductor-metal interfaces
Gamma ray detectors
X-ray imaging
Spectroscopy
Surface cleaning
- Language
- ISSN
- 1082-3654
The interfacial chemistry and composition of Pt electrodes sputter deposited on bromine-etched CdZnTe surfaces was studied by XPS. The interfacial composition of a functioning and a non-functioning CdZnTe detector shows significant differences. The degree of cation out-diffusion into the Pt overlayer and the in-diffusion of Pt into the CdZnTe correlate with the degree of oxidation found at the metal-semiconductor interface. Most of the oxide present at the interface was found to be TeO/sub 2/. The results suggest that the inter-diffusion of the atoms and associated charges contribute to stoichiometric variations at the metal-semiconductor interface and influence the electrical performance of the devices.