TCAD Analysis of the Impact of the Metal-Semiconductor Junction Properties on the Forward Characteristics of MPS/JBS SiC Diodes
- Resource Type
- Conference
- Authors
- Boccarossa, Marco; Borghese, Alessandro; Maresca, Luca; Riccio, Michele; Breglio, Giovanni; Irace, Andrea
- Source
- 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022 IEEE Workshop on. :1-5 Sep, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Transportation
Performance evaluation
Schottky diodes
Metallization
Silicon carbide
Schottky barriers
Modulation
Europe
MPS diode
SiC
Schottky contact
Ohmic contact
TCAD simulation
Snapback
- Language
In this paper the effect of different types of anode contacts is analyzed through TCAD simulations for Schottky, PiN and MPS/JBS diodes. Several case-studies are investigated and it is found that an accurate selection of the Schottky barrier height is necessary to allow the onset of the bipolar conduction in MPS devices. Moreover, tuning the Schottky barrier height allows to achieve different levels of conductivity modulation when the PiN region is forward biased.