Risk Assessment of Electron Induced SEE during the JUICE Mission
- Resource Type
- Conference
- Authors
- Sukhaseum, N.; Vandevelde, B.; Salvy, L.; Augustin, G.; Varotsou, A.; Chatry, N.; Tali, M.; Bezerra, F.; Ecoffet, R.; Polo, C. Boatella
- Source
- 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2018 18th European Conference on. :1-7 Sep, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Protons
Single event upsets
Earth
Sensitivity
Field programmable gate arrays
Planetary orbits
Random access memory
Single event effects
High energy electron
Proton direct ionization
SRAM memory
Jovian environment
- Language
- ISSN
- 1609-0438
The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.