Demonstration of Wire Bondless Silicon Carbide Power Module with Integrated LTCC Jet Impingement Cooler
- Resource Type
- Conference
- Authors
- Chen, Hao; Wei, Tiwei; Li, Xiaoling; Chen, Yuxiang; Lin, Yujui; Chinnaiyan, Sudharsan; Asheghi, Mehdi; Mantooth, H. Alan
- Source
- 2022 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2022 IEEE. :1-6 Oct, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Inductance
Power system measurements
Cooling
Silicon carbide
Density measurement
Thermal resistance
Wires
SiC power module
low parasitic inductance
integration
cooling
- Language
- ISSN
- 2329-3748
As wide-band-gap silicon carbide (SiC) power module increases in power density with high switching speed, parasitic oscillation and localized hot spots caused by power rating degradation become an un-neglected problem in the electric vehicle application. This paper proposes an ultra-low inductance power module integrated with an integrated low temperature co-fired ceramic (LTCC) jet impingement cooling. Ultra-low parasitic inductance leads to low voltage overshoot and low switching losses. The parasitic inductance of a 1200 V/300 A half-bridge SiC power module was reduced to 0.93 nH utilizing wire-bondless connection. To improve power density continuously, a high cooling capability LTCC jet impingement cooler was integrated tightly into the power module with a junction-to-coolant thermal resistance of only 0.06 Kcm 2 /W. Compared with the conventional cooling integration structure, the junction-to-coolant thermal resistance was reduced by approximately 71%. The proposed design structure was under development to verify its electrical performance and cooling performance by experiments.