Estimation of Oxide Breakdown Voltage During a CDM Event Using Very Fast Transmission Line Pulse and Transmission Line Pulse Measurements
- Resource Type
- Conference
- Authors
- Troussier, Chloe; Bourgeat, Johan; Jacquier, Blaise; Simeu, Emmanuel; Arnould, Jean-Daniel
- Source
- 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-5 Mar, 2021
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Breakdown voltage
Power transmission lines
Electric breakdown
Estimation
Logic gates
Transmission line measurements
Reliability engineering
ESD
CDM
Oxide Breakdown
VF-TLP
- Language
- ISSN
- 1938-1891
Using TLP (Transmission Line Pulse) and VF-TLP (Very Fast Transmission Line Pulse) to emulate a fast transient stress, a study of oxide reliability during a CDM (Charged Devise Model) event was done to establish an empirical law between the time to breakdown and the voltage applied to the gate. A wide array of transistors in different configurations was tested to reflect real situation during a CDM event.