Wavelength tuning in high power InGaAs/AlGaAs lasers grown on nonplanar substrates
- Resource Type
- Conference
- Authors
- Brovelli, L.; Arent, D.J.; Jaeckel, H.; Meier, H.P.
- Source
- 12th IEEE International Conference on Semiconductor Laser Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International. :50-51 1990
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Laser tuning
Indium gallium arsenide
Power lasers
Photonic band gap
Substrates
Pump lasers
Waveguide lasers
Absorption
Erbium-doped fiber lasers
Molecular beam epitaxial growth
- Language
Strained-layer InGaAs/AlGaAs QW lasers represent a relatively new class of laser devices in the wavelength region around 1 pm where they provide a practical and inexpensive pump source for Erbium doped fiber amplifiers as well as a high power source for second harmonic generation in KTP-crystals.