The exchange bias (EB) in thin films with compensated AFM-FM interfaces is explained at the microscopic level with the support of experimental results. In the article, we varied the thickness of IrMn deposited above Co and have observed that, for small thickness the system has shown soft EB and as the thickness increases the EB has shown oscillation nature. As the thickness increases, the soft EB has transformed into hard EB. Also for the AFM deposited below the FM layer, the soft EB has enhanced by 5 times (20 Oe to 100 Oe).