Life testing and failure analysis of PHEMT MMICs
- Resource Type
- Conference
- Authors
- Anderson, W.T.; Roussos, J.A.; Mittereder, J.A.
- Source
- 2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513) GaAs reliability workshop GaAs Reliability Workshop, 2000. Proceedings. :45-52 2000
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Life testing
Failure analysis
PHEMTs
MMICs
Life estimation
Temperature
Radio frequency
Gallium arsenide
High power amplifiers
Radiofrequency amplifiers
- Language
Accelerated high temperature RF life testing was used to investigate the reliability of two-stage GaAs MMIC power amplifiers based on 0.25 m PHEMT technology. Life testing was performed at elevated baseplate temperatures with MMICs operating at typical DC bias conditions and large signal RF drive levels of two dB compression. The resulting failure distribution was log normal and the estimated median life time extrapolated to a channel temperature of 140 C was 2.3x10/sup 6/ hours with an activation energy of 1.1 eV.