Modeling of hydrogen effects in GaAs FETs
- Resource Type
- Conference
- Authors
- Mutha, R.R.; Rancour, D.P.; Kayali, S.A.; Anderson, W.T.
- Source
- 1997 GaAs Reliability Workshop. Proceedings GaAs reliability GaAs Reliability Workshop, 1997., Proceedings. :72-76 1997
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Hydrogen
Gallium arsenide
FETs
Silicon
Temperature
Contamination
Semiconductor process modeling
Equations
Doping profiles
Monte Carlo methods
- Language
Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures.