Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
- Resource Type
- Conference
- Authors
- Moser, M.; Pradhan, M.; Alomari, M.; Schoch, B.; Sharma, K.; Kallfass, I.; Garcia-Luque, A.; Martin-Guerrero, T. M.; Burghartz, J. N.
- Source
- 2022 17th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2022 17th European. :80-83 Sep, 2022
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Semiconductor device modeling
Aluminum
HEMTs
Silicon
Wide band gap semiconductors
Scattering parameters
Transistors
Aluminium Gallium Nitride (AlGaN)
Indium Aluminium Nitride (InAlN)
High Resistivity Silicon (HR-Si)
High-Electron Mobility Transistor (HEMT) and Large-Diameter
- Language
A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias $S$-parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit, namely $\mathrm{f}_{\mathbf{T}}\approx$ 20 GHz and $f_{\boldsymbol{\max}}\approx$ 41 GHz are drawn out for initial evaluation of the technology.