Polyimide as Antenna Substrate for THz InP-Based Resonant Tunnelling Diode Oscillators
- Resource Type
- Conference
- Authors
- Alhussini, Salman M.; Aljohani, Abdulah. J.; Alharbi, Khalid H.
- Source
- 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Infrared, Millimeter and Terahertz Waves (IRMMW-THz),2022 47th International Conference on. :1-2 Aug, 2021
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Fabrication
Degradation
Dielectric constant
Patch antennas
Polyimides
Resonant tunneling devices
III-V semiconductor materials
- Language
- ISSN
- 2162-2035
In this paper, a patch antenna fabricated on a thin Polyimide (PI) substrate (ɛ r =3.5) is proposed. The antenna can be fabricated for same chip integration with the promising indium phosphide (InP) based resonant tunneling diode (RTD) terahertz (THz) oscillator. The proposed antenna is isolated from the InP by the ground plane which is placed between the InP and PI materials. The proposed structure can solve the antenna performance issues caused by the thick and large dielectric constant InP substrate (ɛ r =12.54) when used as antenna substrate. The antenna is designed at 300 GHz. The simulated results show air-side radiation and the effects of the InP on the antenna performance is eliminated.