High repetition rate two-section InAs/InP quantum-dash passively mode locked lasers
- Resource Type
- Conference
- Authors
- Rosales, R.; Merghem, K.; Martinez, A.; Accard, A.; Lelarge, F.; Ramdane, A.
- Source
- IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials. :1-4 May, 2011
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Computing and Processing
Communication, Networking and Broadcast Technologies
Cavity resonators
Laser mode locking
Indium phosphide
Threshold current
Quantum dot lasers
- Language
- ISSN
- 1092-8669
First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ∼ 100 GHz are presented. The effects of gain/absorber section lengths and driving conditions on ML characteristics are systematically investigated.