Temperature Dependent Dielectric Function and Critical Points of Bulk Ge Compared to α-Sn on InSb
- Resource Type
- Conference
- Authors
- Emminger, C.; Carrasco, R.; Samarasingha, N.; Abadizaman, F.; Zollner, S.
- Source
- 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM) Photonics Society Summer Topical Meeting Series (SUM), 2018 IEEE. :149-150 Jul, 2018
- Subject
- Photonics and Electrooptics
Temperature dependence
Dielectrics
Oscillators
Absorption
Analytical models
Germanium
Photonic band gap
- Language
- ISSN
- 2376-8614
The temperature dependence of the dielectric function of Ge is investigated in a spectral range from 0.5 to 6.3 eV between 10 and 738 K. Structures occurring in the infrared region of α-Sn on InSb are compared to the absorption edge of Ge.