An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure
- Resource Type
- article
- Authors
- Qingyu Yuan; Jinze Tang; Xiaodong Luan; Xin Lin; Fan Chang; Jiali Cheng
- Source
- Active and Passive Electronic Components, Vol 2023 (2023)
- Subject
- Electrical engineering. Electronics. Nuclear engineering
TK1-9971
- Language
- English
- ISSN
- 1563-5031
An improved method of extracting small-signal equivalent circuit model parameters for gallium nitride high electron mobility transistors (GaN HEMTs) is presented. This paper intends to present a method to extract the parasitic inductance and resistance of transistors based on the short-test structure without the open-circuit test structure. The parasitic capacitance of transistors is extracted by the method based on the size scalable model. Compared with the traditional COLD-FET method, the extraction procedure is simpler and more convenient. After removing the influence of parasitic elements, the intrinsic parameters of the model can be extracted by the S-parameters measured at different bias points. The experimental results show that the simulation results have good agreement with the measured results in the range of 0.5∼110 GHz.