To improve thermal stability and relieve current convergence in rf power bjts, an embedded active CMOS ballast circuit is proposed. By detecting the inhomogeneous temperature through distributed temperature sensors, the adjacent ballast circuit is triggered to shunt the base convergence current of the power BJT cell, performing the ballast protection for the device. Simulations and measurements validate the effectiveness of the proposed ballast circuit. Compared to conventional ballast resistor methods, the improved device integrated with ballast circuits exhibits superior electrical performance. The single ballast circuit only consumes 6.5 mW with additional occupied area of 2530 um2.