由于优异的综合性能,负性光敏聚酰亚胺已成为微电子领域不可或缺的材料,根据负性光敏聚酰亚胺结构和合成工艺的不同,总结了其主要种类和研究进展.随着微电子技术的高度集成化和扇出型晶圆级封装技术的发展,对负性光敏聚酰亚胺材料提出了更高的要求,如更低的介电常数、更低的热膨胀系数和更低的固化温度等.本文进一步介绍了负性光敏聚酰亚胺材料的不同改性方法及其微观作用机制,并对比分析了各类改性方法的优缺点,为高性能负性光敏聚酰亚胺材料的设计开发提供理论基础.
Negative photosensitive polyimide has become an indispensable material in the field of microelectronics due to its excellent thermal,mechanical,and dielectric properties.Based on the structure and synthesis process of negative photosensitive polyimide(PSPI),it can be classified into ester-based PSPI,ionic PSPI,chemical amplification PSPI,and self-increasing sensitivity PSPI.This paper provides a comprehensive comparison of the characteristics and advantages and disadvantages of different types of negative photosensitive polyimides,as well as their corresponding research progress.With the highly integrated microelectronics technology and the development of fan-out wafer-level packaging technology,higher requirements have been put forward for negative photosensitive polyimide materials,such as lower dielectric constant,lower coefficient of thermal expansion,and lower curing temperature.Therefore,this paper further introduces the different modification methods and microscopic mechanisms of negative photosensitive polyimide materials,and compares and analyzes the advantages and disadvantages of various modification methods,so as to provide a theoretical basis for the design and development of high-performance negative photosensitive polyimide materials.