横向磁场下坩埚转速对半导体级直拉单晶硅熔体中流场与氧浓度的影响机制 / Influence Mechanism of Crucible Rotation Rates on the Flow Field and Oxygen Concentration of the Semiconductor-Grade Czochralski Monocrystalline Silicon Melt under Transverse Magnetic Field
- Resource Type
- Academic Journal
- Source
- 人工晶体学报 / Journal of Synthetic Crystals. 52(9):1641-1650
- Subject
ANSYS有限元分析 200mm半导体级单晶硅 直拉法 坩埚转速 流场 氧浓度 ANSYS finite element software 200 mm semiconductor-grade monocrystalline silicon Czochralski method crucible rotation rate flow field oxygen concentration - Language
- Chinese
- ISSN
- 1000-985X