本工作在GaP/Si衬底上基于In0.83Al0.17As异变缓冲层实现了InAs/In0.83Al0.17As量子阱的生长.研究了GaxIn1-xP和GaAsyP1-y递变缓冲层对量子阱结构材料性能的影响.采用GaxIn1-xP组分渐变缓冲层的样品X射线衍射倒易空间衍射峰展宽更小,表明样品中的失配位错更少.两个样品均在室温下实现了中红外波段的光致发光,而采用GaxIn1-xP组分渐变缓冲层的样品在不同温度下都具有更高的光致发光强度.这些结果表明在GaP/Si复合衬底上采用阳离子混合的渐变缓冲层对生长中红外InAs量子阱结构具有相对更优的效果.
InAs/In0. 83Al0. 17As quantum wells have been demonstrated on In0. 83Al0. 17As metamorphic layers on GaP/Si substrates. The effects of GaxIn1-xP and GaAsyP1-y graded buffer layers on the sample performances are investi?gated. The sample with GaxIn1-xP metamorphic buffer layer has narrower width in X-ray diffraction reciprocal space maps,indicating less misfit dislocations in the sample. Mid-infrared photoluminescence signals have been observed for both samples at room temperature,while the sample with GaxIn1-xP metamorphic buffer shows stron?ger photoluminescence intensity at all temperatures. The results indicate the metamorphic buffers with mixed cat?ions show superior effects for the mid-infrared InAs quantum wells on GaP/Si composite substrates.