CMOS抗辐射加固集成电路单粒子效应仿真研究进展 / The Simulation Study on Single Event Effect of Radiation Hardened CMOS Integrated Circuits
- Resource Type
- Academic Journal
- Source
- 现代应用物理 / Modern Applie Physics. 9(3):1-9
- Subject
CMOS集成电路 单粒子效应 仿真 抗辐射加固 交叉隔离 错误猝熄 - Language
- Chinese
- ISSN
- 2095-6223