为了在提升终端耐压的同时减少终端的使用面积,基于屏蔽栅沟槽型MOSFET(shielded gate trench MOSFET,简称SGTMOSFET)设计了一种沟槽型终端.通过Sentaurus TCAD软件对终端结构进行仿真,仅改变沟槽和P型环参数,最终使终端的耐压达到了135V,有效终端长度仅为18.5μm.此终端结构适用于中低压领域,且在SGTMOSFET元胞工艺步骤的基础上仅增加了一层掩膜,终端结构工艺和元胞工艺兼容,易于实现.
In order to improve the withstand voltage of the termination and reduce the use area of the termination,a trench termination is designed based on the shielded gate trench MOSFET(SGTMOSFET).The termination structure is simulated by Sentaurus TCAD software,and only the parameters of trench and P-ring are changed.Finally,the termination withstand voltage reaches 135V,and the effective termination length is only 18.5 μm.This termination structure is applicable to the medium and low voltage fields,and only one layer of mask is added on the basis of the SGTMOSFET cell process steps.The termination structure process is compatible with the cell process and is easy to implement.