Microchannel avalanche photodiode with wide linearity range
- Resource Type
- Working Paper
- Authors
- Sadygov, Z.; Olshevski, A.; Anphimov, N.; Bokova, T.; Chalyshev, V.; Chirikov-Zorin, I.; Dovlatov, A.; Krumshtein, Z.; Mekhtieva, R.; Mukhtarov, R.; Shukurova, V.; Troitskaya, M.; Zhezher, V.
- Source
- Subject
- Physics - Instrumentation and Detectors
- Language
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.
Comment: Submitted to Journal of Technical Physics