We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of layers in the tens-of-microns thickness range are highly desirable for substrate reuse and heterogenous integration of separated layers. In this work we utilize novel approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness material spalled to date. Additionally, we demonstrate substrate re-use, bonding of the spalled films to carrier substrates, and explore the spin coherence of the spalled films. In preliminary studies we are able to achieve coherent spin control of neutral divacancy ($VV^{0}$) qubit ensembles and measure a spin T2* of 0.581 $\mu$s in such spalled films.
Comment: 13 pages (+6 supporting), 6 figures (+5 supporting)