Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film
- Resource Type
- Working Paper
- Authors
- Zhang, Xiaowen; Xu, Tiequan; Shi, Ruochen; Han, Bo; Liu, Fachen; Liu, Zhetong; Gao, Xiaoyue; Du, Jinlong; Wang, Yue; Gao, Peng
- Source
- Subject
- Condensed Matter - Superconductivity
Condensed Matter - Materials Science
- Language
In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show MgB$_2$-E2g mode splitting and softening near the MgB$_2$/MgO interface. Orbital-resolved core-level EELS link the phonon softening to in-plane boron-atom electron states' changes. Ab initio calculations confirm this softening enhances electron-phonon coupling at the interface. Our findings highlight interface engineering's potential for superconductivity enhancement.