Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots
- Resource Type
- Working Paper
- Authors
- Agafonov, Oleksiy B.; Dais, Christian; Grützmacher, Detlev; Haug, Rolf J.
- Source
- Appl. Phys. Lett. 96, 222107 (2010)
- Subject
- Condensed Matter - Mesoscale and Nanoscale Physics
- Language
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement we extract the strength of the confinement potential of quantum dots.
Comment: 4 pages, 3 figures