The impact of oxide degradation on the low frequency ( ) noise behaviour of P channel mosfets
- Resource Type
- Authors
- S. Moran; Paul K. Hurley; Alan Mathewson; E. Sheehan
- Source
- Microelectronics Reliability. 36:1679-1682
- Subject
- Materials science
Noise measurement
business.industry
Infrasound
Electrical engineering
Integrated circuit
Low frequency
Condensed Matter Physics
Noise (electronics)
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Stress (mechanics)
Reliability (semiconductor)
law
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Degradation (telecommunications)
- Language
- ISSN
- 0026-2714
Results are presented on the impact of hot carrier degradation on the low frequency (1/f) noise behaviour of p channel MOSFETs. It is found that, in contrast to nMOSFETs, p channel devices exhibit no measurable change in the magnitude of the 1/f noise after severe device degradation at the condition of maximum gate current. The observations have been obtained on a range of device geometries and processes. The degradation results are analysed in conjunction with charge pumping characteristics to explain the insensitivity of the 1/f noise to hot carrier degradation in the case of p channel devices. The significance of these results to the performance of p channel devices in analogue applications is discussed.