Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions
- Resource Type
- Authors
- Wen Chung Chiang; Kui Hon Ou Yang; Kuan Chia Chiu; Jhen‑Yong Hong; Chen Feng Hung; Minn-Tsong Lin; Dah‑Chin Ling
- Source
- Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
- Subject
- Resistive touchscreen
Multidisciplinary
Materials science
Yield (engineering)
Spintronics
Magnetoresistance
Condensed matter physics
Science
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Magnetic field
High resistance
Tunnel magnetoresistance
Hysteresis
Medicine
0210 nano-technology
- Language
- English
- ISSN
- 2045-2322
We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the $$\text{AlO}_{x}$$ AlO x layer. The role played by oxygen vacancies in $$\text{AlO}_{x}$$ AlO x is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single $$\text{AlO}_{x}$$ AlO x -based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.