Study of GaN nanorods converted from β-Ga2O3
- Resource Type
- Authors
- Tao Tao; Li Yuewen; Shuang Wang; Hua Xuemei; Peng Chen; Dongdong Zhang; Duo Liu; Xiangqian Xiu; Zili Xie; Youdou Zheng; Xiong Zening; Bin Liu; Rong Zhang
- Source
- Superlattices and Microstructures. 117:235-240
- Subject
- 010302 applied physics
Materials science
business.industry
Cathodoluminescence
Gallium nitride
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
chemistry.chemical_compound
symbols.namesake
chemistry
Transmission electron microscopy
0103 physical sciences
Sapphire
symbols
Optoelectronics
General Materials Science
Nanorod
Electrical and Electronic Engineering
0210 nano-technology
High-resolution transmission electron microscopy
business
Raman spectroscopy
Wurtzite crystal structure
- Language
- ISSN
- 0749-6036
We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68–3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.