Anisotropic homogeneous linewidth of the heavy-hole exciton in (110)-oriented GaAs quantum wells
- Resource Type
- Authors
- Klaus Pierz; Hebin Li; Gaël Nardin; Mark Bieler; Steven T. Cundiff; Rohan Singh; Galan Moody; Travis M. Autry
- Source
- Physical Review B
- Subject
- Physics
Condensed matter physics
Exciton
Dephasing
Physics::Optics
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
Polarization (waves)
01 natural sciences
Fourier transform spectroscopy
Electronic, Optical and Magnetic Materials
Laser linewidth
0103 physical sciences
010306 general physics
0210 nano-technology
Anisotropy
Quantum well
Biexciton
- Language
- ISSN
- 1550-235X
1098-0121
The homogeneous and inhomogeneous linewidths of the heavy-hole exciton resonance in a (110)-oriented GaAs multiple-quantum-well sample are measured using optical two-dimensional Fourier transform spectroscopy. By probing the optical nonlinear response for polarization along the in-plane crystal axes [1$\overline{1}$0] and [001], we measure different homogeneous linewidths for the two orthogonal directions. This difference is found to be due to anisotropic excitation-induced dephasing, caused by a crystal-axis-dependent absorption coefficient. The extrapolated zero-excitation density homogeneous linewidth exhibits an activation-like temperature dependence. We find that the homogeneous linewidth extrapolated to zero excitation density and temperature is $\ensuremath{\sim}$34 $\ensuremath{\mu}$eV, while the inhomogeneous linewidth is $\ensuremath{\sim}$1.9 meV for both polarizations.