Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck
- Resource Type
- Source
- Japanese Journal of Applied Physics. 51:086502
- Subject
Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy - Language
- ISSN
- 1347-4065
0021-4922