D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System
- Resource Type
- Authors
- Tsunehisa Marumoto; Masaharu Ito; Takashi Okawa
- Source
- BCICTS
- Subject
- Materials science
business.industry
ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS
Transmitter
Duplex (telecommunications)
Integrated circuit
law.invention
QAM
D band
Duplexer
Hardware_GENERAL
law
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Transceiver
business
Quadrature amplitude modulation
- Language
This paper presents a D-band transceiver utilizing a 70-nm GaAs metamorphic high electron mobility transistor (mHEMT) technology for a frequency division duplex (FDD) system. The transceiver includes a duplexer, transmitter and receiver modules, an LO and IF circuit board, and a real-time modem. Each module comprises a silica-based package on which D-band converter and E-band multiplier monolithic microwave integrated circuits (MMICs) are mounted using a flip-chip bonding technique. Real-time communication tests are performed at 142- and 157-GHz duplex frequencies. A 10-Gbps transmission with a high spectral efficiency are achieved using a 128 quadrature amplitude modulation (QAM) signal.