Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices
- Resource Type
- Authors
- Sang-Hoon Bae; Hyunseok Kim; Yongmin Baek; Yongmo Park; Yunjo Kim; Doeon Lee; Kyusang Lee; Jeehwan Kim; Hyun Kum; Wei Kong
- Source
- Nature Electronics. 2:439-450
- Subject
- Semiconductor
Materials science
business.industry
Electrical and Electronic Engineering
Photonics
business
Epitaxy
Instrumentation
Engineering physics
Computing systems
Electronic, Optical and Magnetic Materials
Lattice mismatch
- Language
- ISSN
- 2520-1131
The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches. This Review Article examines the development of epitaxial growth and layer transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices.