Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization
- Resource Type
- Authors
- Bich-Yen Nguyen; Ran Cheng; Yee-Chia Yeo; Anyan Du; Yinjie Ding; Qian Zhou; Nicolas Daval
- Source
- Solid-State Electronics. 83:37-41
- Subject
- Diffraction
Materials science
Strain (chemistry)
business.industry
fungi
Transistor
technology, industry, and agriculture
Silicon on insulator
Condensed Matter Physics
eye diseases
Electronic, Optical and Magnetic Materials
law.invention
Strain engineering
Ion implantation
law
Materials Chemistry
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
Crystallization
Deformation (engineering)
business
- Language
- ISSN
- 0038-1101
We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge + implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by Crystallization. The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to −0.55% and −1.2% were detected by Nano-Beam Diffraction (NBD) at the center and the edge, respectively, of a 50 nm wide ultra-thin Si region located between two local SiGe regions. The under-the-BOX SiGe regions may be useful for strain engineering of ultra-thin body transistors formed on UTBB-SOI substrates.