Intensity dependent deflection spectroscopy for absorption measurements
- Resource Type
- Authors
- Tom Götze; Mark Bieler; Stefanie Kroker; Walter Dickmann
- Source
- EPJ Web of Conferences, Vol 238, p 06004 (2020)
- Subject
- Photon
Materials science
010308 nuclear & particles physics
Intensity scaling
business.industry
Band gap
Spatially resolved
Physics
QC1-999
Physics::Optics
01 natural sciences
Molecular physics
Semiconductor
Impurity
Deflection (engineering)
0103 physical sciences
010306 general physics
Spectroscopy
business
- Language
- English
We report on a method for the characterization of optical absorption in semiconductors at photon energies below the bandgap energy. We use intensity dependent deflection spectroscopy to measure spatially resolved the optical absorption and to separate the occurring absorption mechanisms. To this end, we take advantage of the different intensity scaling of these mechanisms and extract the material parameters by fitting the intensity dependent absorption to a physical model. Our method enables a simple but sufficient determination of crucial optical loss properties (e.g. impurity related absorption and two-photon absorption) in various semiconductor systems, e.g. substrates for optical components or solar cells.