Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask
- Resource Type
- Authors
- Thi Thu Mai; Ssu Kuan Wu; Hua Chiang Wen; Jin Ji Dai; Jhen Gang Jiang; Wu-Ching Chou; Rong Xuan; Chih Wei Hu; Cheng Wei Liu; Sa Hoang Huynh; Sui An Yen
- Source
- Coatings
Volume 11
Issue 1
Coatings, Vol 11, Iss 16, p 16 (2021)
- Subject
- Electron mobility
Materials science
business.industry
GaN HEMT
Surfaces and Interfaces
Substrate (electronics)
Chemical vapor deposition
High-electron-mobility transistor
Surfaces, Coatings and Films
Volumetric flow rate
lcsh:TA1-2040
2DEG
SiNx nano-mask
Nano
edge threading dislocation
Materials Chemistry
Surface roughness
Optoelectronics
V-defects
lcsh:Engineering (General). Civil engineering (General)
business
Layer (electronics)
- Language
- ISSN
- 2079-6412
The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111) substrate by metalorganic chemical vapor deposition in combination with the insertion of a SiNx nano-mask into the low-temperature GaN buffer layer. Herein, the impact of SiH4 flow rate on two-dimensional electron gas (2DEG) properties was comprehensively investigated, where an increase in SiH4 flow rate resulted in a decrease in edge-type threading dislocation density during coalescence process and an improvement of 2DEG electronic properties. The study also reveals that controlling the SiH4 flow rate of the SiNx nano-mask grown at low temperatures in a short time is an effective strategy to overcome the surface desorption issue that causes surface roughness degradation. The highest electron mobility of 1970 cm2/V·
s and sheet carrier concentration of 6.42 ×
1012 cm&minus
2 can be achieved via an optimized SiH4 flow rate of 50 sccm.