Improved contact resistance of new developed silver paste on mono-crystalline silicon wafer with ultra-low doped emitter
- Resource Type
- Authors
- Lei Wang; Han Jing; Li Yan; Weichen Wang; Cuiwen Guo; Scott Kruse
- Source
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
- Subject
- 010302 applied physics
Materials science
Silicon
business.industry
Contact resistance
Doping
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
chemistry
Electrical resistivity and conductivity
0103 physical sciences
Optoelectronics
Wafer
Crystalline silicon
Ohm
0210 nano-technology
business
Common emitter
- Language
This report presents a silver paste, containing new developed Te-glass, with improved contact resistance on mono-crystalline silicon wafer with ultra-low doped emitters. Its FF and efficiency increase 0.5 and 0.05% respectively. The paste's contact resistivity is around 2 mOhm cm2 on 110 Ohm/sq wafer. The efficiency of the paste is quite stable when firing peak temperature varies from 740 °C to 780 °C. The SEM image reveals that the better contact resistance of the paste is from direct contact between silicon wafer and silver electrode.